The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities, as shown recently by Tokyo Tech researchers. Doping with isovalent and larger-sized alkali metal ions effectively increased the free charge carrier concentration and the mechanism was unraveled by their theoretical calculations. Their carrier doping technology enables high carrier concentration and high mobility p-type thin films to be prepared from the solution process, with photovoltaic device applications.
Perovskite solar cells have been the subject of much research as the next generation of photovoltaic devices. However, many challenges remain to be overcome for the practical application. One of them concerns the hole transport layer (p-type semiconductor) in photovoltaic cells that carries holes generated by light to the electrode. In conventional p-type organic transport semiconductors, hole dopants are chemically reactive and degrade the photovoltaic device. Inorganic p-type semiconductors, which are chemically stable, are promising alternatives, but fabrication of conventional inorganic p-type semiconductors requires high temperature treatment. In this regard, the p-type inorganic semiconductors that can be fabricated at low temperatures and have excellent hole transport ability have been desired.
Inorganic p-type copper iodide (CuI) semiconductor is a leading candidate for such hole transport materials in photovoltaic device applications. In this material, native defects give rise to charge imbalance and free charge carriers. However, the overall number of defects is generally too low for satisfactory device performance.