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Engineering science and mechanics doctoral student Fedor Sharov adjusts settings in a very low frequency EDMR spectrometer. Credit: Kelby Hochreither/Penn State |
A new technique for studying defects in semiconductor materials could lead to improved speed, power and performance of electronic devices by revealing the atomic-level limitations of advanced materials.
Developed by a Penn State-led team of researchers and lead by former Penn State graduate student James Ashton, the analytic tool makes use of extremely small magnetic fields and frequencies far smaller than those typically used in such measurements to detect and measure imperfections in new materials, providing structural information about the magnetic interactions between electrons and nearby magnetic nuclei in a simpler way than previously possible.
The approach was published as a cover article in Applied Physics Letters. According to Patrick Lenahan, distinguished professor of engineering science and mechanics at Penn State and Ashton’s doctoral thesis adviser, the tool allows researchers to take a big step toward solving a variety of faults in next-generation devices.