![]() |
A representation of a two-dimensional ferroelectric material. Image credit: UC Berkeley/Suraj Cheema. |
As electronic devices become smaller and smaller, the materials that power them need to become thinner and thinner. Because of this, one of the key challenges scientists face in developing next-generation energy-efficient electronics is discovering materials that can maintain special electronic properties at an ultrathin size.
Advanced materials known as ferroelectrics present a promising solution to help lower the power consumed by the ultrasmall electronic devices found in cell phones and computers. Ferroelectrics — the electrical analog to ferromagnets — are a class of materials in which some of the atoms are arranged off-center, leading to a spontaneous internal electric charge or polarization. This internal polarization can reverse its direction when scientists expose the material to an external voltage. This offers great promise for ultralow-power microelectronics.
Unfortunately, conventional ferroelectric materials lose their internal polarization below around a few nanometers in thickness. This means they are not compatible with current-day silicon technology. This issue has previously prevented the integration of ferroelectrics into microelectronics.
But now a team of researchers from the University of California at Berkeley performing experiments at the U.S.