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| Walter Weber, Masiar Sistani and Andreas Fuchsberger Photo Credit: Technische Universität Wien |
The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the chip industry for years. At TU Wien, researchers have now succeeded for the first time in manufacturing a silicon-germanium (SiGe) transistor using an alternative approach that will not only enable smaller dimensions in the future, but will also be faster, require less energy and function at extremely low temperatures, which is important for quantum chips.
The key trick lies in the oxide layer that insulates the semiconductor: it is doped and produces a long-range effect that extends into the semiconductor. The technology was developed by TU Wien (Vienna), JKU Linz and Bergakademie Freiberg.


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